Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy
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Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor phase epitaxy
Scanning Kelvin probe microscopy is used to image surface potential variations in GaN ~0001! grown by hydride vapor phase epitaxy. The influence of finite probe tip size on these measurements is analyzed, suggesting that significant differences between measured and actual surface potential variations may exist. Experimentally, localized regions in which the surface work function increases by ;0...
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Using a previously shown method, we prepared 2”-GaN wafers as templates for a self separation process. Self separation is happening during cooldown after growing thick layers of GaN in our hydride vapor phase epitaxy (HVPE) reactor. Our templates consist of GaN grown by metalorganic vapor phase epitaxy (MOVPE) directly on sapphire. These GaN layers are masked with 200nm of SiN that are structur...
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Thick GaN layers have been grown by hydride vapor phase epitaxy (HVPE) on different GaN templates grown by metalorganic vapor phase epitaxy. Crack formation could be reduced by using a hydrogen/nitrogen carrier gas mixture. By carefully optimizing the growth conditions in the final stage of the process, excellent surface morphologies could be obtained at still acceptably high growth rates. Up t...
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GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samp...
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Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E150.23460.006, E250.57860.006, E350.65760.031, E450.96160.026, and E550.24060.012 eV. Among these, the levels labeled E1 , E2 , and E3 are interpreted as corresponding to deep levels...
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